SOI FinFET Based 10T SRAM Cell Design against Short Channel Effects
نویسندگان
چکیده
منابع مشابه
Design of a Low Power 10T SRAM Cell
SRAM is a semiconductor memory cell. In this paper, a 10T SRAM cell is designed by using cadence virtuoso tool in 180nm CMOS technology. Its performance characteristics such as power, delay, and power delay product are analysed. 10T SRAM cell is basically 6T SRAM cell with 4 extra transistors. In this 10T SRAM cell, additional read circuitry is attached to avoid flipping of cell. The power diss...
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Industry demands Low-Power and HighPerformance devices now-a-days. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thicknes...
متن کاملComparison of Conventional 6T SRAM cell and FinFET based 6T SRAM Cell Parameters at 45nm Technology
When working for low power application the main estimation is to reduce leakage components and parameters. This stanza explores a vast link towards low leakage power SRAM cells using new technology and devices. The RAM contains bi-stable cross coupled latch which has V_th higher in write mode access MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and lower V_th in read access mode MO...
متن کاملLow Power 10T SRAM Design for Dynamic Power Reduction
The aim of paper is to get over the problem of 6T SRAM cell where it loses its reliability at low supplies due to degraded noise margins. These is done by using a 10T SRAM where the cell uses a charge sharing technique between the transistors so that SRAM could be made more rigid against the noises that can cause damage to the cell at low power supplies and along with that charge sharing betwee...
متن کاملDesign Choice in 45-nm Dual-Port SRAM - 8T, 10T Single End, and 10T Differential
As process technology is scaled down, a large-capacity SRAM will be used. Its power must be lowered. The V th variation of the deep-submicron process affects the SRAM operation and its power. This paper compares the macro area, readout power, and operating frequency among dual-port SRAMs: an 8T SRAM, 10T single-end SRAM, and 10T differential SRAM considering the multi-media applications. The 8T...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2019
ISSN: 1898-794X,0587-4246
DOI: 10.12693/aphyspola.135.702